Maker : Sanyo Semicon Device
Part No. : SBT250-10L

Datasheet PDF : SBT250-10L.pdf
Cross Reference : SBT250-10L Cross Reference
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Shortcut : SBT250-10J  SBT250-10JS  SBT250-10L  SBT250-10R 

Product Information

Ordering number : ENN7800 SBT250-10L www.DataSheet4U.com SBT250-10L Applications • Schottky Barrier Diode (Twin Type · Cathode Common) 100V, 25A Rectifier High frequency rectification (switching regulators, converters, choppers). Features • • • • • Guaranteed up to Tj=150°C. Low forward voltage (VF max=0.80V). Fast reverse recovery time. Low switching noise. High reliability due to highly reliable planar structure. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRRM VRSM IO IFSM Tj Tstg 50Hz resistive load, Sine wave Tc=92°C 50Hz sine wave, 1 cycle Conditions Ratings 100 105 25 100 --55 to +150 --55 to +150 Unit V V A A °C °C Electrical Characteristics at Ta=25°C Parameter Reverse Voltage Forward Voltage Reverse Current Interterminal Capacitance Thermal Resistance Symbol VR VF IR C Rth(j-c) Conditions IR=3mA, Tj=25°C* IF=9.5A, Tj=25°C* VR=50V, Tj=25°C* VR=10V, Tj=25°C* Junction-Case : Smoothed DC Ratings min 100 0.80 0.3 280 1.6 typ max Unit V V mA pF °C / W Note) * : Value per element Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62405SD MS IM TB-00001561 No.7800-1/3 SBT250-10L Package Dimensions unit : mm 7503-002 15.6 14.0 2.6 3.5 4.8 3.2 2.0 Electrical Connection www.DataSheet4U.com Anode Anode 1.6 2.0 20.0 1.0 0.6 1 2 3 0.6 1.4 1.3 15.0 20.0 1.2 Cathode 1 : Anode 2 : Cathode 3 : Anode SANYO : TO-3PB 5.45 5.45 100 7 5 3 2 IF -- VF Represented by max 5 3 2 IR -- VR Tj=1 50°C 25°C Reverse Current, IR -- mA Forward Current, IF -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 0 0.5 1.0 1.5 2.0 2.5 IT09159 100 7 5 3 2 10 7 5 3 2 1.0 0 20 40 Tj=1 m 50°C yp °C t 150 ax °C t 125 100 yp typ °C 60 80 100 120 IT09160 Forward Voltage, VF -- V Average Forward Power Dissipation, PF(AV) -- W 35 Average Reverse Power Dissipation, PR(AV) -- W PF(AV) -- IO Reverse Voltage, VR -- V 20 18 16 14 12 10 θ 8 6 4 2 0 0 20 40 60 80 100 360° PR(AV) -- VRM Rectangular wave 30 θ 25 360° (4) (1) (2) (3) PR max at Tj=150°C (1) Sine wave 20 180° 360° (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangular wave VR (2) (3) 15 10 Sine wave VR 180° 360° 5 0 0 5 10 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 15 20 25 30 IT09193 (4) 120 IT09162 Average Output Current, IO -- A Peak Reverse Voltage, VRM -- V No.7800-2/3 SBT250-10L 160 Tc -- IO Interterminal Capacitance, C -- pF (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Sine wave 2 www.DataSheet4U.com C -- VR f=100kHz Case Temperature, Tc -- °C 140 1000 7 5 120 180° 360° 100 3 2 Rectangular wave 80 θ 60 0 360° 5 10 15 100 7 5 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 ID01096 (1) 20 (2) (4) 25 (3) 30 Average Output Current, IO -- A 120 IT09837 Reverse Voltage, VR -- V Transient Ther...

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