Maker : Vishay Siliconix
Part No. : SI4431BDY

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Si4431BDY New Product www.DataSheet4U.com Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -30 0.050 @ VGS = -4.5 V -5.8 rDS(on) (W) 0.030 @ VGS = -10 V ID (A) -7.5 SO-8 S S S G 1 2 3 4 Top View 8 7 6 5 D D D D S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C ID TA = 70_C IDM IS -2.1 2.5 1.6 -55 to 150 - 6.0 -30 -1.2 1.5 0.9 W _C -4.6 A Symbol VDS VGS 10 secs Steady State -30 "20 Unit V - 7.5 -5.7 THERMAL RESISTANCE RATINGS Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 72092 S-22437—Rev. A, 20-Jan-03 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 38 70 22 Maximum 50 85 28 Unit _C/W C/W 1 Si4431BDY Vishay Siliconix www.DataSheet4U.com New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "20 V VDS = -24 V, VGS = 0 V VDS = -24 V, VGS = 0 V, TJ = 70_C VDS = -5 V, VGS = -10 V ID(on) VDS = -5 V, VGS = -4.5 V VGS = -10 V, ID = -7.5 A rDS(on) gfs VSD VGS = -4.5 V, ID = -5.8 A VDS = -15 V, ID = -7.5 A IS = -2.1 A, VGS = 0 V -30 -7 0.023 0.036 18 -0.78 -1.1 0.030 0.050 -1.0 -3.0 "100 -1 -10 V nA mA m A A W S V Symbol Test Condition Min Typ Max Unit On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -2.1 A, di/dt = 100 A/ms VDD = -15 V, RL = 15 W ID ^ -1 A, VGEN = -10 V, RG = 6 W VDS = -15 V, VGS = -5 V, ID = -7.5 A 13 3.6 6 10 10 70 47 45 20 20 110 70 80 ns 20 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 30 VGS = 10 thru 5 V 24 I D - Drain Current (A) I D - Drain Current (A) 4V 24 30 Transfer Characteristics 18 18 12 12 TC = 125_C 6 25_C -55 _C 2.5 3.0 3.5 4.0 4.5 6 3V 0 0 1 2 3 4 5 0 0.0 0.5 1.0 1.5 2.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 72092 S-22437—Rev. A, 20-Jan-03 Si4431BDY New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.08 r DS(on) - On-Resistance ( W ) 1600 1400 C - Capacitance (pF) 0.06 1200 1000 800 600 400 200 0.00 0 5 10 15 20 25 30 0 0 6 12 18 24 30 Crss Coss Ciss Vishay Siliconix www.DataSheet4U.com Capacitance 0.04 VGS = 4.5 V VGS = 10 V 0.02 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 10 V GS - Gate-to-Source Voltage (V) VDS = 15 V ID = 7.5 A 8 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 7.5 A 1.4 6 r DS(on) - On-Resistance (W) (Normalized) 10 15 20 25 1.2 4 1.0 2 0.8 0 0 5 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 30 0.10 On-Resistance vs. Gate-to-Source Voltage I S - Source Current (A) TJ = 150_C 10 r DS(on) - On-Resistance ( W ) 0.08 ID = 2 A 0.06 ID = 7.5 A 0.04 TJ = 25_C 0.02 1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 72092 S-22437—Rev. A, 20-Jan-03 www.vishay.com 3 Si4431BDY Vishay Siliconix www.DataSheet4U.com New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.6 50 Single P...

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