Maker : Fairchild Semiconductor
Part No. : SI4431DY

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Product Information

Si4431DY January 2001 Si4431DY P-Channel Logic Level PowerTrench MOSFET General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Features • –6.3 A, –30 V. RDS(ON) = 0.032 Ω @ VGS = -10 V RDS(ON) = 0.05 Ω @ VGS = -4.5 V • Low gate charge • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability Applications • DC/DC converter • Load switch • Motor Drive D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current – Continuous – Pulsed TA=25oC unless otherwise noted Parameter Ratings –30 ±20 (Note 1a) Units V V A W -6.3 -40 2.5 1.2 1.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range °C Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 °C/W °C/W Package Marking and Ordering Information Device Marking 4431 Device Si4431DY Reel Size 13’’ Tape width 12mm Quantity 2500 units 2001 Fairchild Semiconductor International Si4431DY Rev A Si4431DY Electrical Characteristics Symbol BVDSS ∆BVDSS ∆TJ IDSS IGSSF IGSSR TA = 25°C unless otherwise noted Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate–Body Leakage, Forward Gate–Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = -250 µA ID = -250 µA, Referenced to 25°C VDS = -24 V, VGS = 20 V, VGS = -20 V VGS = 0 V VDS = 0 V VDS = 0 V Min -30 Typ Max Units V Off Characteristics -22 -1 100 –100 mV/°C µA nA nA On Characteristics VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance On–State Drain Current Forward Transconductance VDS = VGS, ID = –250 µA ID = –250 µA, Referenced to 25°C VGS = –10 V, ID = –7.0 A ID = –5.5 A VGS = –4.5 V, VGS = –10 V, ID = –7.0A, TJ=125°C VGS = –10 V, VDS = –10 V, VDS = –5 V ID = –7.0 A –1 –1.5 4 0.027 0.04 0.04 –3 V mV/°C 0.032 0.05 0.54 Ω ID(on) gFS –20 14.5 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = –15 V, f = 1.0 MHz V GS = 0 V, 930 278 114 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn–On Delay Time Turn–On Rise Time Turn–Off Delay Time Turn–Off Fall Time Total Gate Charge Gate–Source Charge Gate–Drain Charge VDD = –15 V, VGS = –10 V, ID = –1 A, RGEN = 6 Ω 12 11 33 13 21 20 52 23 29 ns ns ns ns nC nC nC VDS = –15 V, VGS = –10 V ID = –7.2 A, 18 2.5 4.1 Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –2.1 A Voltage –2.1 (Note 2) A V –0.76 –1.2 Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 50°/W when 2 mounted on a 1in pad of 2 oz copper b) 105°/W when 2 mounted on a .04 in pad of 2 oz copper c) 125°/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% Si4431DY Rev A Si4431DY Typical Characteristics 40 VGS = -10.0V -6.0V -ID, DRAIN CURRE...

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