Maker : Vishay Siliconix
Part No. : SI4435BDY

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Product Information

Si4435BDY www.DataSheet4U.com Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) −30 FEATURES ID (A) −9.1 −6.9 rDS(on) (W) 0.020 @ VGS = −10 V 0.035 @ VGS = −4.5 V D TrenchFETr Power MOSFET D Advanced High Cell Density Process D Lead (Pb)-Free Version is RoHS Compliant Available APPLICATIONS D Load Switches D Battery Switch SO-8 S S S G 1 2 3 4 Top View Ordering Information: Si4435BDY-T1 Si4435BDY-T1—E3 (Lead (Pb)-Free) 8 7 6 5 D D D D G S D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State −30 "20 Unit V −9.1 −7.3 −50 −2.1 2.5 1.6 −55 to 150 −7 −5.6 A −1.25 1.5 0.9 W _C THERMAL RESISTANCE RATINGS Parameter Maximum J M i Junction-to-Ambienta ti t A bi t Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1 ” x 1” FR4 Board. Document Number: 72123 S-50694—Rev. C, 18-Apr-05 www.vishay.com t v 10 sec Steady State Steady State Symbol RthJA RthJF Typical 40 70 18 Maximum 50 85 22 Unit _C/W C/W 1 Si4435BDY www.DataSheet4U.com Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Drain Source On State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS( ) DS(on) gfs VSD VDS = VGS, ID = −250 mA VDS = 0 V, VGS = "20 V VDS = −30 V, VGS = 0 V VDS = −30 V, VGS = 0 V, TJ = 55_C VDS = −5 V, VGS = −10 V VGS = −10 V, ID = −9.1 A VGS = −4.5 V, ID = −6.9 A VDS = −10 V, ID = −9.1 A IS = −2.1 A, VGS = 0 V −40 0.015 0.025 24 −0.8 −1.2 0.020 0.035 −1 −3 "100 −1 −25 V nA mA A W S V Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = −2.1 A, di/dt = 100 A/ms VDD = −15 V, RL = 15 W ID ^ −1 A, VGEN = −10 V, RG = 6 W VDS = −15 V, VGS = −10 V, ID = −9.1 A 33 5.8 8.6 10 15 110 70 60 15 25 170 110 90 ns 70 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 50 VGS = 10 thru 6 V 5V I D − Drain Current (A) 4V 30 50 TC = −55_C 40 25_C Transfer Characteristics 40 I D − Drain Current (A) 30 125_C 20 20 10 3V 10 0 0 1 2 3 4 5 VDS − Drain-to-Source Voltage (V) www.vishay.com 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS − Gate-to-Source Voltage (V) Document Number: 72123 S-50694—Rev. C, 18-Apr-05 2 Si4435BDY www.DataSheet4U.com Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.040 r DS(on) − On-Resistance ( W ) 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 0 10 20 30 40 50 0 0 5 10 15 20 25 30 VGS = 10 V C − Capacitance (pF) VGS = 4.5 V 1800 Ciss 2400 Capacitance 1200 600 Coss Crss ID − Drain Current (A) VDS − Drain-to-Source Voltage (V) Gate Charge 10 V GS − Gate-to-Source Voltage (V) VDS = 15 V ID = 9.1 A rDS(on) − On-Resiistance (Normalized) 8 1.4 1.6 On-Resistance vs....

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