Maker : International Rectifier
Part No. : SI4435DY

  Datasheet PDF : SI4435DY.pdf
  Cross Reference : SI4435DY Cross Reference
  Buy Component : SI4435DY Find Stock and Price

Shortcut : SI4435DY  SI4435DY  SI4435DYPBF 

Product Information

PD- 93768A Si4435DY HEXFET® Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel S 1 8 7 A D D D D S S G 2 VDSS = -30V 3 6 4 5 RDS(on) = 0.020Ω Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications.. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques. T o p V ie w SO-8 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA= 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current  Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max. -30 -8.0 -6.4 -50 2.5 1.6 0.02 ± 20 -55 to + 150 Units V A W W/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambientƒ Max. 50 Units °C/W www.irf.com 1 10/14/99 Si4435DY Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -30 ––– ––– ––– -1.0 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– V V GS = 0V, ID = -250µA -0.019 ––– V/°C Reference to 25°C, ID = -1mA 0.015 0.020 VGS = -10V, ID = -8.0A ‚ Ω 0.026 0.035 VGS = -4.5V, ID = -5.0A ‚ ––– ––– V VDS = VGS, ID = -250µA 11 ––– S VDS = -15V, ID = -8.0A ––– -10 VDS = -24V, VGS = 0V µA ––– -10 VDS = -15V, VGS = 0V, TJ = 70°C ––– -100 VGS = -20V nA ––– 100 VGS = 20V 40 60 ID = -4.6A 7.1 ––– nC VDS = -15V 8.0 ––– VGS = -10V ‚ 16 24 VDD = -15V, VGS = -10V ‚ 76 110 ID = -1.0A ns 130 200 RG = 6.0Ω 90 140 R D = 15Ω 2320 ––– VGS = 0V 390 ––– pF VDS = -15V 270 ––– ƒ = 1.0kHz Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. Typ. Max. Units ––– ––– ––– ––– ––– ––– ––– ––– 34 33 -2.5 A -50 -1.2 51 50 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25°C, IS = -2.5A, VGS = 0V TJ = 25°C, I F = -2.5A di/dt = -100A/µs ‚ D S ‚ Notes:  Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on FR-4 board, t ≤ 5sec. ‚ Pulse width ≤ 300µs; duty cycle ≤ 2%. 2 www.irf.com Si4435DY 1000 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP 1000 -I D , Drain-to-Source Current (A) 100 -I D , Drain-to-Source Current (A) 100 VGS -15V -10V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V TOP 10 10 -2.70V 1 1 -2.70V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 0.1 0.1 0.1 0.1 20µs PULS...

Link URL