Maker : Sanyo Semicon Device
Part No. : SMP3003

Datasheet PDF : SMP3003.pdf
Cross Reference : SMP3003 Cross Reference
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Product Information

Ordering number : ENA1655 SMP3003 www.DataSheet4U.com SANYO Semiconductors DATA SHEET SMP3003 Features • • • P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 4V drive. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *1 Avalanche Current *2 Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV PW≤10μs, duty cycle≤1% Tc=25°C Conditions Ratings --75 ±20 --100 --400 90 150 --55 to +150 468 --60 Unit V V A A W °C °C mJ A Note : *1 VDD=--48V, L=100μH, IAV=--60A *2 L≤100μH, Single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=--1mA, VGS=0V VDS=--75V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA --1.2 Ratings min --75 --10 ±10 --2.6 typ max Unit V μA μA V Marking : MP3003 Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network 21710QA TK IM TC-00002253 No. A1655-1/3 SMP3003 Continued from preceding page. Parameter Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--10V, ID=--50A ID=--50A, VGS=--10V ID=--50A, VGS=--4V VDS=--20V, f=1MHz VDS=--20V, f=1MHz VDS=--20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. VDS=--48V, VGS=--10V, ID=--100A VDS=--48V, VGS=--10V, ID=--100A VDS=--48V, VGS=--10V, ID=--100A IS=--100A, VGS=0V min www.DataSheet4U.com Ratings typ 140 6.2 8.0 13400 1000 740 95 1000 800 820 280 50 55 --1.0 --1.5 8.0 11 max Unit S mΩ mΩ pF pF pF ns ns ns ns nC nC nC V Package Dimensions unit : mm (typ) 7001-003 10.2 0.2 4.5 1.3 1.5M AX 9.9 8.8 3.0 1 0.8 2 3 1.2 0 t o 0.3 0.4 2.7 ...

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