Maker : STMicroelectronics
Part No. : T0609NH

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www.DataSheet4U.com ® T0605xH T0609xH SENSITIVE GATE TRIACS FEATURES IT(RMS) = 6A VDRM = 400V to 800V IGT ≤ 5mA to ≤ 10mA A1 A2 G DESCRIPTION The T06xxxH series of triacs uses a high performance MESA GLASS technology. These parts are intended for general purpose applications where gate high sensitivity is required. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM Parameter RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) I2t Value for fusing Critical rate of rise of on-state current diG /dt = 0.1 A/µs. IG = 50 mA Tc= 100 °C tp = 8.3 ms tp = 10 ms tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case Value 6 63 60 18 10 50 - 40, + 150 - 40, + 125 260 °C °C A2s A/µs Unit A A TO220 non-insulated (Plastic) I2t dI/dt Symbol VDRM VRRM January 1995 Parameter D Repetitive peak off-state voltage Tj = 125°C 400 Voltage M 600 S 700 N 800 Unit V 1/5 www.DataSheet4U.com T0605xH / T0609xH THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Rth(j-c) Junction to ambient Junction to case for D.C Junction to case for A.C 360° conduction angle (F=50Hz) Parameter Value 60 4 3 Unit °C/W °C/W °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt Test Conditions VD=12V (DC) RL=33Ω VD=12V (DC) RL=33Ω VD=VDRM RL=3.3kΩ VD=VDRM IG = 40mA IT = 8.5A dIG/dt = 0.5A/µs IT= 50mA Gate open IG= 1.2 IGT Tj= 25°C Tj= 25°C Tj= 125°C Tj= 25°C Quadrant I-II-III-IV I-II-III-IV I-II-III-IV I-II-III-IV MAX MAX MIN TYP Sensitivity 05 5 1.5 0.2 2 09 10 mA V V µs Unit IGM = 4 A (tp = 20 µs) IH * IL Tj= 25°C Tj= 25°C I-III-IV II MAX TYP TYP MAX MAX MAX MIN TYP 5 5 10 1.65 5 2 10 10 20 mA mA VTM * IDRM IRRM dV/dt * ITM= 8.5A tp= 380µs VD = VDRM VR = VRRM VD=67%VDRM Gate open (dI/dt)c = 2.7 A/ms Tj= 25°C Tj= 25°C Tj= 110°C Tj= 110°C V µA mA 20 V/µs 10 1 2 V/µs (dV/dt)c * Tj= 110°C TYP * For either polarity of electrode A2 voltage with reference to electrode A1 ORDERING INFORMATION T TRIAC MESA GLASS CURRENT 2/5 06 09 SENSITIVITY M H PACKAGE : H = TO220 Non-insulated VOLTAGE ® www.DataSheet4U.com T0605xH / T0609xH Fig.1 : Maximum RMS power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum RMS power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) 180 O P(W) 10 8 6 4 2 o Tcase (o C) Rth = 0 o C/W 2.5 o C/W 5 o C/W 10 o C/W = 180 = 120 = 90 o o 10 8 6 4 -95 -100 -105 -110 -115 = 60 = 30 o o 2 I T(RMS) (A) 0 0 1 2 3 4 5 6 -120 Tamb ( C) o 0 0 20 40 60 80 100 120 -125 140 Fig.3 : RMS on-state current versus case temperature. I T(RMS) (A) Fig.4 : Relative variation of thermal impedance versus pulse duration. Zth/Rth 1 7 6 Zt h( j-c) 5 4 3 2 1 0 0 Tcase( C) 10 20 30 40 50 60 70 80 90 100 110 120 130 o = 180 o 0.1 Zt h( j-a) tp (s) 0.01 1E-3 1E-2 1E-1 1E +0 1 E +1 1E +2 5 E+2 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt 60 Tj initial = 25 C o 50 40 30 Ih 20 10 Tj(oC) Number of cycles -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 100 0 3/5 ® www.DataSheet4U.com T0605xH / T0609xH Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : t ≤ 10ms, and corresponding value of I2t. I TSM (A). I2 t (A 2 s) Tj initial = 25o C Fig.8 : On-state characteristics (maximum values). 1000 I TM (A) 100 Tj initial o 25 C I TSM 100 Tj max I2t 10 Tj max Vto =0.93V Rt =0.078 10 1 1 t (ms) VTM (V) 10 1 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6...

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