Maker : ST Microelectronics
Part No. : T1030-600W

  Datasheet PDF : T1030-600W.pdf
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www.DataSheet4U.com ® T1020-600W T1030-600W SNUBBERLESS TRIAC FEATURES s s s s s ITRMS = 10 A VDRM = VRRM = 600V EXCELLENT SWITCHING PERFORMANCES INSULATING VOLTAGE = 1500V(RMS) U.L. RECOGNIZED : E81734 A2 A1 G DESCRIPTION The T1020-600W and 1030-600W triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISOWATT220AB package. The SNUBBERLESSTM concept offers suppression of R-C network, and is suitable for applications such as phase control and static switch on inductive and resistive loads. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) Parameter G A1 A2 ISOWATT220AB (Plastic) Value Tc= 90°C tp = 16.7 ms (1 cycle, 60 Hz) tp = 10 ms (1/2 cycle, 50 Hz) 10 110 125 78 20 100 - 40 to + 150 - 40 to + 125 Unit A A I2t dI/dt I2t Value (half-cycle, 50 Hz) Critical rate of rise of on-state current Gate supply : IG = 500 mA dIG /dt = 1 A/µs. tp = 10 ms Repetitive F = 50 Hz Non Repetitive A2s A/µs Tstg Tj Storage temperature range Operating junction temperature range °C Symbol VDRM VRRM Parameter Repetitive peak off-state voltage Tj = 125°C Value 600 Unit V www.DataSheet4U.com September 2001 - Ed: 1A 1/5 www.DataSheet4U.com T1020-600W / 1030-600W THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for A.C (360° conduction angle) Parameter Value 50 3.0 Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 100 mW PGM = 2 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IH * VTM * IDRM IRRM dV/dt * (dV/dt)c * Test Conditions VD=12V (DC) RL=33Ω VD=12V (DC) RL=33Ω VD=VDRM RL=3.3kΩ IG=500mA VD=VDRM dlG/dt= 3Aµs IT= 100mA Gate open Tj= 25°C Tj= 25°C Tj= 125°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 125°C Linear slope up to Gate open VD=67%VDRM (dI/dt)c = 5.3 A/ms (see note) Tj= 125°C Tj= 125°C Quadrant I-II-III I-II-III I-II-III I-II-III MAX MAX MIN TYP MAX MAX MAX MAX MIN MIN 200 10 35 1.5 10 2 300 20 T1020 20 1.5 0.2 2 50 V µA mA V/µs V/µs T1030 30 Unit mA V V µs IGM = 1 A (tp = 20 µs) ITM= 14A tp= 380µs VDRM rated VRRM rated * For either polarity of electrode A2 voltage with reference to electrode A1. Note : In usual applications where (dI/dt)c is below 5.3 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use a snuber R-C network accross T1020W / T1030W triacs. www.DataSheet4U.com 2/5 www.DataSheet4U.com T1020-600W / 1030-600W Fig.1 : Maximum power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) 180 O P(W) 14 12 = 120 = 180 o o Tcase (oC) Rth = 0 o C/W o 2.5 C/W o 5 C/W 7 o C/W 14 12 10 8 -85 10 = 90 -95 o 8 6 = 30 = 60 o o -105 6 4 -115 Tamb ( C) o 4 2 0 0 1 2 3 4 5 6 7 I T(RMS) (A) 8 9 10 2 0 0 -125 10 20 30 40 50 60 70 80 90 100 110 120 130 Fig.3 : RMS on-state current versus case temperature. Fig.4 : Thermal transient impedance junction to case and junction to ambient versus pulse duration. Zth/Rth 1 Zth(j-c) I T(RMS) (A) 12 10 8 6 4 2 0 = 180 o 0.1 Zth(j-a) 0.01 Tcase( C) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 o tp(s) 1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -40 -20 Igt Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 120 Ih[Tj] Ih[Tj=25 o C] Tj initial = 25 C 100 o 80 60 Ih 40 20 Tj(oC) 0 20 40 60 80 100 120 140 0 1 Number of cycles 10 100 1000 www.DataSheet4U.com 3/5 www.DataSheet4U.com T1020-600W / 1030-600W Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp ® 10ms, and corres...

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