Maker : ST Microelectronics
Part No. : T1030W

  Datasheet PDF : T1030W.pdf
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Shortcut : T1030-600W  T1030W 

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www.DataSheet4U.com ® T1020W T1030W SNUBBERLESS TRIAC FEATURES ITRMS = 10 A VDRM = VRRM = 400V to 800V EXCELLENT SWITCHING PERFORMANCES INSULATING VOLTAGE = 1500V(RMS) U.L. RECOGNIZED : E81734 DESCRIPTION The T1020/1030W triacs use high performance glass passivated chip technology, housed in a fully molded plastic ISOWATT220AB package. The SNUBBERLESSTM concept offers suppression of R-C network, and is suitable for applications such as phase control and static switch on inductive and resistive loads. ABSOLUTE RATINGS (limiting values) Symbol IT(RMS) ITSM RMS on-state current (360° conduction angle) Non repetitive surge peak on-state current (Tj initial = 25°C ) Parameter Tc= 90°C tp = 16.7 ms (1 cycle, 60 Hz) tp = 10 ms (1/2 cycle, 50 Hz) I2 t dI/dt I2t Value (half-cycle, 50 Hz) Critical rate of rise of on-state current Gate supply : IG = 500 mA dIG /dt = 1 A/µs. tp = 10 ms Repetitive F = 50 Hz Non Repetitive Tstg Tj Tl Storage temperature range Operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5 mm from case Parameter 400 VDRM VRRM Repetitive peak off-state voltage Tj = 125°C 400 T1020 / 1030-xxxW 600 600 700 700 800 800 V Value 10 110 125 78 20 100 - 40 to + 150 - 40 to + 125 260 °C °C A2s A/µs Unit A A A1 A2 G A2 A1 G ISOWATT220AB (Plastic) Symbol Unit www.DataSheet4U.com November 1996 1/5 www.DataSheet4U.com T1020W / 1030W THERMAL RESISTANCES Symbol Rth(j-a) Rth(j-c) Junction to ambient Junction to case for A.C (360° conduction angle) Parameter Value 50 3.0 Unit °C/W °C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 1 W PGM = 10 W (tp = 20 µs) ELECTRICAL CHARACTERISTICS Symbol IGT VGT VGD tgt IH * VTM * IDRM IRRM dV/dt * (dV/dt)c * Test Conditions VD=12V (DC) RL=33Ω VD=12V (DC) RL=33Ω VD=VDRM RL=3.3kΩ VD=VDRM IG = 500mA dlG/dt= 3Aµs IT= 100mA Gate open Tj= 25°C Tj= 25°C Tj= 125°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 25°C Tj= 125°C Linear slope up to Gate open VD=67%VDRM (dI/dt)c = 5.3 A/ms Tj= 125°C Quadrant I-II-III I-II-III I-II-III I-II-III MAX MAX MIN TYP MAX MAX MAX MAX MIN MIN 200 10 35 1.5 10 2 300 20 T1020 20 1.5 0.2 2 50 V µA mA V/µs V/µs T1030 30 Unit mA V V µs IGM = 4 A (tp = 20 µs) ITM= 14A tp= 380µs VDRM rated VRRM rated (see note) Tj= 125°C * For either polarity of electrode A2 voltage with reference to electrode A1. Note : In usual applications where (dI/dt)c is below 5.3 A/ms, the (dV/dt)c is always lower than 10V/µs, and, therefore, it is unnecessary to use a snuber R-C network accross T1020W / T1030W triacs. www.DataSheet4U.com 2/5 ® www.DataSheet4U.com T1020W / 1030W Fig.1 : Maximum power dissipation versus RMS on-state current. Fig.2 : Correlation between maximum power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. P (W) 180 O P(W) 14 12 10 Tcase (o C) Rth = 0 o C/W 2.5 o C/W o 5 C/W 7 o C/W = 180 = 120 = 90 o o o 14 12 10 8 -85 -95 8 6 4 2 0 0 1 = 60 = 30 o o -105 6 4 -115 Tamb (oC) 10 20 30 40 50 60 70 80 90 100 110 120 130 I T(RMS) (A) 2 3 4 5 6 7 8 9 10 2 0 0 -125 Fig.3 : RMS on-state current versus case temperature. Fig.4 : Thermal transient impedance junction to case and junction to ambient versus pulse duration. Zth/Rth 1 Zth (j-c) 12 10 8 6 4 2 0 I T(RMS) (A) = 180 o 0.1 Zt h( j-a) 0.01 Tcase( C) 0 10 20 30 40 50 60 70 80 90 100 110 120 130 1E-3 1E-2 1E-1 1E +0 1E +1 o tp (s) 1 E+2 5 E +2 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 120 100 80 60 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 Igt Tj initial = 25 C o Ih 40 20 Tj(oC) Number of cycles -40 -20 0 20 40 60 80 100 120 140 0 1 10 100 1000 www.DataSheet4U.com ® 3/5 www.DataSheet4U.com T1020W / 1030W Fig.7 : Non repetitive surge peak on-state c...

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