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TOSHIBA Photocoupler Infrared LED + Photo ICMaker : Toshiba Semiconductor
Shortcut : TLP550 TLP551 TLP552 TLP553 TLP553 TLP554 TLP555 TLP557 TLP558 TLP559 |
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TLP550 TOSHIBA Photocoupler Infrared LED + Photo IC TLP550 Degital Logic Isolation Line Receiver Feedback Control Power Supply Control Switching Power Supply Transistor Invertor TLP550 constructs a high emitting diode and a one chip photo diode− transistor. TLP550 has no base connection, and is suitable for application at noisy environmental condition. This unit is 8−lead DIP package. l Isolation voltage: 2500 Vrms (min.) l Switching speed: tpHL, tpLH = 0.5µs (typ.)(RL=1.9 kΩ) l TTL compatible l UL recognized: UL1577, file No. E67349 TOSHIBA Weight: 0.54 g 11−10C4 Unit in mm Pin Configuration (top view) 1 2 3 4 8 7 6 5 1 : N.C. 2 : Anode 3 : Cathode 4 : N.C. 5 : Emitter 6 : Collector 7 : N.C. 8 : Cathode Schematic ICC IF 2 VF 3 IO 6 5 VO VCC 8 GND 1 2002-09-25 TLP550 Maximum Ratings (Ta = 25°C) Characteristic Forward current Pulse forward current LED Peak transient forward current Reverse voltage Diode power dissipation (Note 4) Output current Peak output current Detector Supply voltage Output voltage Output power dissipation (Note 5) Operating temperature range Storage temperature range Lead solder temperature (10s) Isolation voltage (AC, 1min., R.H. = 40~60%) (Note 1) Derate 0.8mA above 70°C. (Note 2) 50% duty cycle, 1ms pulse width. Derate 1.6mA / °C above 70°C. (Note 3) Pulse width 1µs, 300pps. (Note 4) Derate 0.9mW / °C above 70°C. (Note 5) Derate 2mW / °C above 70°C. (Note 6) (Note 1) (Note 2) (Note 3) Symbol IF IFP IFPT VR PD IO IOP VCC VO PO Topr Tstg Tsol BVS Rating 25 50 1 5 45 8 16 -0.5~15 -0.5~15 100 -55~100 -55~125 260 2500 Unit mA mA A V mW mA mA V V mW °C °C °C Vrms 2 2002-09-25 TLP550 Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage LED Forward voltage temperature coefficient Reverse current Capacitance between terminal Symbol VF ∆VF /∆Ta IR CT IOH (1) Detector High level output current IOH (2) IOH High level supply voltage ICCH Test condition IF = 16 mA IF = 16 mA VR = 5 V VF = 0, f = 1MHz IF = 0 mA, VCC = VO = 5.5 V IF = 0 mA, VCC = VO = 15 V IF = 0 mA, VCC = VO = 15 V Ta = 70°C IF = 0 mA, VCC = 15 V Ta = 25°C Current transfer ratio IO / IF IF = 16 mA VCC = 4.5 V VO = 0.4 V Rank : 0 Ta = 0~70°C Rank : 0 Low level output voltage Isolation resistance Capacitance between input to output VOL RS CS IF = 16 mA, VCC = 4.5 V IO = 1.1 mA (rank 0: IO = 2.4mA) R.H. = 40~60%, V = 1kV DC (Note 6) V = 0, f = 1MHz Min. 1.45 ― ― ― ― ― ― ― 10 19 5 15 ― Typ. 1.65 -2 ― 60 3 ― ― 0.01 30 30 ― ― ― 12 Max. 1.85 ― 10 ― 500 5 50 1 ― ― ― ― 0.4 Unit V mV / °C µA pF nA µA µA µA % Coupled V ― ― 10 ― ― Ω pF 0.8 Switching Characteristics (Ta = 25°C) Characteristic Symbol Test Condition IF = 0→ 16 mA, VCC = 5V, RL = 4.1 kΩ tpHL (Note 7) Rank 0: RL = 1.9 kΩ IF = 16→ 0 mA, VCC = 5V, RL = 4.1 kΩ tpLH (Note 7) Rank 0: RL = 1.9 kΩ CMH IF = 0 mA, VCM = 200 Vp-p RL = 4.1 kΩ (rank 0: RL = 1.9 kΩ) (Note 8) CML IF = 16 mA, VCM = 200 Vp-p RL = 4.1 kΩ (rank 0: RL = 1.9 kΩ) (Note 8) ― -1500 ― V /µs ― 0.6 1.2 ― ― 0.5 1.0 0.8 2.0 µs Min. ― Typ. 0.3 Max. 0.8 µs Unit Propagation delay time (H→ L) Propagation delay time (L→ H) Common mode transient immunity at high output level Common mode transient immunity at low output level ― 1500 ― V /µs 3 2002-09-25 TLP550 (Note 6) Device considered two-terminal device: Pins 1, 2, 3 and 4 shorted together and pin 5, 6, 7 and 8 shorted together. (Note 7) Switching time test circuit. Pulse input IF 1 2 3 4 8 7 6 5 RL VCC=5V IF 0 PW = 100µs Duty ratio = 1 / 10 IF monitor 51Ω VO Output monitor VO 1.5V tpHL tpLH 5V 1.5V VOL (Note 8) Common mode transient immunity test circuit. 1 IF 2 3 4 8 7 6 5 VCM RL VCC=5V VCM tr VO (IF = 0mA) VO (IF = 16mA) 90% 10% 200V 0V VO tf 5V 2V 0.8V VOL Output monitor Pulse gen ZO=50Ω CMH= 160 (V) tf (µs) , CML= 160 (V) tf (µs) (Note 9) Maximum electrostatic discharge voltage for any pins: 100V ... |
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