Maker : Vishay Siliconix
Part No. : TSAL6200

  Datasheet PDF : TSAL6200.pdf
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Product Information

GaAs/GaAlAs IR Emitting Diode in ø 5 mm (T–1¾ ) 4U t Packageee Description TSAL6200 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology, molded in clear, bluegrey tinted plastic packages. In comparison with the standard GaAs on GaAs technology these emitters achieve more than 100 % radiant power improvement at a similar wavelength. The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology. Therefore these emitters are ideally suitable as high performance replacements of standard emitters. .c om TSAL6200 Vishay Telefunken w w w .D at Sh a 94 8389 Features D Extra high radiant power and radiant intensity D High reliability D Low forward voltage D Suitable for high pulse current operation D Standard T–1¾ (ø 5 mm) package D Angle of half intensity ϕ = ± 17° D Peak wavelength l p = 940 nm D Good spectral matching to Si photodetectors Applications Infrared remote control units with high power requirements Free air transmission systems Infrared source for optical counters and card readers IR source for smoke detectors Absolute Maximum Ratings Tamb = 25_ C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient w w w .D t a S a e h .c U t4 e m o Test Conditions tp/T = 0.5, tp = 100 m s tp = 100 m s t x 5sec, 2 mm from case Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Document Number 81010 Rev. 6, 20-May-99 www.vishay.de • FaxBack +1-408-970-5600 1 (5) w w w .D a aS t Value 5 100 200 1.5 210 100 –55...+100 –55...+100 260 350 ee h 4U t Unit V mA mA A mW °C °C °C °C K/W om .c TSAL6200 Vishay Telefunken Basic Characteristics Tamb = 25_ C Parameter Forward Voltage g Temp. Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity y Radiant Power Temp. Coefficient of f e Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of l p Rise Time Fall Time Virtual Source Diameter Test Conditions IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 m s IF = 100 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp = 20 ms IF = 1.0 A, tp = 100 m s IF = 100 mA, tp = 20 ms IF = 20 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA method: 63% encircled energy Symbol VF VF TKVF IR Cj Ie Ie Min Typ 1.35 2.6 –1.3 25 60 500 35 –0.6 ±17 940 50 0.2 800 800 2.8 Max 1.6 3 10 40 340 Unit V V mV/K mA pF mW/sr mW/sr mW %/K deg nm nm nm/K ns ns mm fe TKf e ϕ lp Dl TKl p tr tf ø Typical Characteristics (Tamb = 25_ C unless otherwise specified) 250 PV – Power Dissipation ( mW ) 200 IF – Forward Current ( mA ) 250 200 150 RthJA 100 150 100 RthJA 50 0 50 0 0 20 40 60 80 100 0 96 11986 20 40 60 80 100 94 7957 e Tamb – Ambient Temperature ( °C ) Tamb – Ambient Temperature ( °C ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 2. Forward Current vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (5) Document Number 81010 Rev. 6, 20-May-99 TSAL6200 Vishay Telefunken 101 I e – Radiant Intensity ( mW/sr ) 102 13601 1000 I F – Forward Current ( A ) IFSM = 1 A ( Single Pulse ) tp / T = 0.01 100 0.1 0.5 0.05 100 10 1 1.0 10–1 10–2 96 11987 0.1 10–1 100 101 tp – Pulse Duration ( ms ) 100 101 102 103 IF – Forward Current ( mA ) 104 Figure 3. Pulse Forward Current vs. Pulse Duration 104 IF – Forward Current ( mA ) Figure 6. Radiant Intensity vs. Forward Current 1000 103 F e – Radiant Power ( mW ) 4 13602 100 102 tp = 100 m s tp / T = 0.001 10 101 1 100 0 13600 0.1 1 2 3 100 VF – Forward Voltage ( V ) 101 102 103 IF – Forward Current ( mA ) 104 Figure 4. Forward Current vs. Forward Voltage 1.2 V Frel – Relative Forward Voltage 1.1 I e rel ; F e rel IF = 10 mA 1.0 0.9 Figure 7. Radiant Power vs. Forw...

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