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High Voltage / High Current Darlington Transistor ArraysMaker : Hangzhou Silan Microelectronics
Shortcut : ULN2000 ULN2001 ULN2001 ULN2001 ULN2001 ULN2001 ULN2001A ULN2001A ULN2001A ULN2001A ULN2001A ULN2001A-ULN2002A ULN2001AD ULN2001AN ULN2001D ULN2001D ULN2002 ULN2002 ULN2002A ULN2002A ULN2002A ULN2002A ULN2002A ULN2002AD ULN2002AN ULN2002D ULN2002D ULN2003 ULN2003 ULN2003 ULN2003 ULN2003 ULN2003 ULN2003 ULN2003A ULN2003A ULN2003A ULN2003A ULN2003A ULN2003A ULN2003AD ULN2003AFW ULN2003AN ULN2003AP ULN2003D ULN2003D ULN2003L ULN2003LV ULN2004 ULN2004 ULN2004 ULN2004 ULN2004 ULN2004 ULN2004A ULN2004A ULN2004A ULN2004A ULN2004A ULN2004A ULN2004AD ULN2004AFW ULN2004AI ULN2004AN ULN2004AP ULN2004D ULN2004D ULN2004L ULN2005 ULN2005A ULN2005A ULN2005A ULN200X |
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ULN2003 LI NEAR I NTEGRATED CI RCUI T HIGH VOLTAGE AND HIGH CURRENT DARLINGTON TRANSISTOR ARRAY DESCRIPTION The ULN2003 is a monolithic high voltage and high current Darlington transistor arrays. It consists of seven NPN darlington pairs that features high-voltage outputs with common-cathode clamp diode for switching inductive loads. The collector-current rating of a single darlington pair is 500mA. The darlington pairs may be parrlleled for higher current capability. Applications include relay drivers,hammer drivers, lampdrivers,display drivers(LED gas discharge),line drivers, and logic buffers. The ULN2003 has a 2.7kΩ series base resistor for each darlington pair for operation directly with TTL or 5V CMOS devices. DIP-16 FEATURES * 500mA rated collector current(Single output) * High-voltage outputs: 50V * Inputs compatibale with various types of logic. * Relay driver application LOGIC DIAGRAM 1B 2B 3B 4B 5B 6B 7B E 1 2 3 4 5 6 7 8 16 15 14 13 12 11 10 9 1C 2C SCHEMATIC(EACH DARLINGTON PAIR) COM 3C 2.7k OUPUT C 4C INPUT B 5C 6C 7C COM 7.2k 3k E YOUW ANG ELECTRONI CO. CS LTD 1 ULN2003 Characteristic Colletor-Emitter Voltage Input Voltage Peak Collector Current Total Emitter-terminal LI NEAR I NTEGRATED CI RCUI T Symbol VCE VI Io IOK ABSOLUTE MAXIMUM RATINGS(Ta=25°C) Value 50 30 500 500 Unit V A mA mA Power Dissipation Pd 950 Tamb=25°C 495 Tamb<85°C mW mW °C °C Operating Temperature Storage Temperature Topr Tstg -20~ +85 -65 ~ +150 Note: All volatge values are with repect to the emitter/substrate terminal E, unless otherwise noted. ELECTRICAL CHARACTERISTICS(Ta=25°C,unless otherwise specified) Characteristic Test Figure Symbol Test Conditions VCE=2V,Ic=200mA On-state Input Voltage 6 VI(ON) VCE=2V,Ic=250mA VCE=2V,Ic=300mA II=250µA,Ic=100mA Collector-Emitter Saturation Voltage 5 VCE(SAT) II=350µA,Ic=200mA II=500µA,Ic=350mA Collector Cutoff Current Clamp Forward Voltage Off-state Input Current Input Current Clamp Reverse Current Input Capacitance Propagation delay time, low-tohigh-level output Propagation delay time, highto-low-level output High-level output Voltage after switching 1 2 8 3 4 7 -9 VF II(OFF) II IR CI tPLH ICEX VCE=50V,II=0 VCE=50V,II=0,Ta=70°C IF=350mA VCE=50V,IC=500mA, Ta=70°C VI=3.85V VR=50V VR=50V, Ta=70°C VI=0,f=1MHz 15 0.25 50 1.7 65 0.95 1.35 50 100 25 1 0.9 1 1.2 Min Typ Max 2.4 2.7 3 1.1 1.3 1.6 50 100 2 Units V V µA V µA mA µA pF µs µs 9 tPHL 0.25 1 10 VOH Vs=50V,Io=300mA Vs-20 mV YOUW ANG ELECTRONI CO. CS LTD 2 ULN2003 TEST CIRCUITS Open VCE LI NEAR I NTEGRATED CI RCUI T Open VCE Open ICEX VI ICEX Figure 1 ICEX Test Circuit Figure 2 ICEX Test Circuit Open VCE Open II(off) IC II(on) VI Open Figure 3 II(off) Test Circuit Figure 4 II(on) Test Circuit Open HFE = Ic II Open HFE = Ic II II VCE IC VI(on) VCE IC Note: II is fixed for measuring VCE(sat),variable for measuring HFE. Figure 5 HFE,VCE(sat) Test Circuit Figure 6 VI(on) Test Circuit YOUW ANG ELECTRONI CO. CS LTD 3 ULN2003 VR IR Open LI NEAR I NTEGRATED CI RCUI T VF Open IF Figure 7 IR Test Circuit Figure 8 VF Test Circuit 50% 50% INPUT OUTPUT tPHL tPLH 50% 50% Figure 9. Propagation Delay Time Waveforms Input Vs 2mH 1N3064 Pulse Generator (Note A) CL=15pF (Note B) 200 Output 90% 1.5V 90% 1.5V 10% <10ns VIH=3V Input Output 10% 0V VOH VOL Note: A. The Pulse generatoe has the following characteristics: PRR=12.5kHz, Zo=50Ω B. CL includes proble and jig capacitance. Figure 10. Latch-up Test Circuit and Voltage Waveforms YOUW ANG ELECTRONI CO. CS LTD 4 ULN2003 Collector-Emitter saturation Voltage vs. Collector Current 2.5 LI NEAR I NTEGRATED CI RCUI T Collector-Emitter saturation Voltage vs. Total Collector Current (two darlington paralleled) Ta=25k 2.0 II=250µA TYPICAL PERFORMANCE CHARACTERISTICS 2.5 Collector-Emitter saturation Voltage, V CE(sat) (V) 2.0 II=250µA 1.5 1.0 II=350µA II=500µA Collector-Emitter saturation Voltage, V CE... |
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