Maker : Vishay
Part No. : V20100SG

  Datasheet PDF : V20100SG.pdf
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www.DataSheet.co.kr New Product V20100SG, VF20100SG, VB20100SG, VI20100SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 1 V20100SG PIN 1 PIN 2 CASE 3 1 VF20100SG PIN 1 PIN 2 2 3 • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Compliant to RoHS directive 2002/95/EC accordance to WEEE 2002/96/EC and in PIN 3 PIN 3 TO-263AB K K TO-262AA TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. 1 2 3 A NC VB20100SG NC A K HEATSINK VI20100SG PIN 1 PIN 2 K MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB, and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum per PIN 3 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 20 A 100 V 150 A 0.75 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C Voltage rate of change (rated VR) Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range SYMBOL VRRM IF(AV) IFSM EAS IRRM dV/dt VAC TJ, TSTG V20100SG VF20100SG VB20100SG VI20100SG 100 20 150 150 1.0 10 000 1500 - 40 to + 150 UNIT V A A mJ A V/µs V °C Document Number: 88966 Revision: 08-Oct-09 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr New Product V20100SG, VF20100SG, VB20100SG, VI20100SG Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS IR = 10 mA IF = 5 A IF = 10 A Instantaneous forward voltage IF = 20 A IF = 5 A IF = 10 A IF = 20 A VR = 70 V Reverse current VR = 100 V Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C IR (2) TA = 125 °C TA = 25 °C VF (1) TA = 25 °C SYMBOL VBR TYP. 105 (minimum) 0.55 0.66 0.91 0.50 0.59 0.75 15 6 60 13 MAX. 1.07 0.82 350 25 µA mA µA mA V UNIT V THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RθJC V20100SG 2.2 VF20100SG 4.0 VB20100SG 2.2 VI20100SG 2.2 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB ITO-220AB TO-263AB TO-263AB TO-262AA PREFERRED P/N V20100SG-E3/4W VF20100SG-E3/4W VB20100SG-E3/4W VB20100SG-E3/8W VI20100SG-E3/4W UNIT WEIGHT (g) 1.88 1.74 1.37 1.37 1.45 PACKAGE CODE 4W 4W 4W 8W 4W BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube DELIVERY MODE Tube Tube Tube Tape and reel Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 24 Resistive or Inductive Load 25 D = 0.5 D = 0.8 V20100SG VI20100SG VB20100SG VF20100SG 12 D = 0.3 Average Forward Current (A) 20 Average Power Loss (W) 20 D = 0.2 D = 1.0 D = 0.1 16 15 10 T 5 D = tp/T tp 20 24 8 4 0 0 25 50 75 100 125 150 175 0 0 4 8 12 16 Case Temperature (°C) Average Forward Current (A) Fig. 1 - Maximum F...

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