Maker : Vishay Siliconix
Part No. : V20100SG

  Datasheet PDF : V20100SG.pdf
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Product Information

New Product V20100SG, VF20100SG & VI20100SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Low thermal resistance www.DataSheet4U.com V20100SG PIN 1 PIN 2 CASE 2 1 3 1 VF20100SG PIN 1 PIN 2 2 3 • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC PIN 3 PIN 3 TO-262AA K TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. 1 VI20100SG PIN 1 PIN 2 K 2 3 MECHANICAL DATA Case: TO-220AB, ITO-220AB and TO-262AA Epoxy meets UL 94V-0 flammability rating 20 A 100 V 150 A 0.75 V 150 °C PIN 3 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for commercial grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) Peak forward surge current 10 ms single half sine-wave superimposed on rated load Isolation voltage (ITO-220AB only) From terminal to heatsink t = 1 min Operating junction and storage temperature range SYMBOL VRRM IF(AV) IFSM VAC TJ, TSTG V20100SG VF20100SG 100 20 150 1500 - 40 to + 150 VI20100SG UNIT V A A V °C Document Number: 88966 Revision: 19-Oct-07 www.vishay.com 1 New Product V20100SG, VF20100SG & VI20100SG Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS at IR = 1.0 mA at IF = 5 A IF = 10 A IF = 20 A at IF = 5 A IF = 10 A IF = 20 A TA = 25 °C TA = 25 °C VF TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C 0.50 0.59 0.75 15 6 IR 60 13 0.80 350 25 µA mA µA mA SYMBOL VBR TYP. 100 (minimum) 0.55 0.66 0.91 MAX. 0.97 UNIT Instantaneous forward voltage (1) V www.DataSheet4U.com Reverse current (2) at VR = 70 V at VR = 100 V Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: 10 ms pulse width THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RθJC V20100SG 2.2 VF20100SG 4.0 VI20100SG 2.2 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB ITO-220AB TO-262AA PREFERRED P/N V20100SG-E3/4W VF20100SG-E3/4W VI20100SG-E3/4W UNIT WEIGHT (g) 1.88 1.74 1.45 PACKAGE CODE 4W 4W 4W BASE QUANTITY 50/tube 50/tube 50/tube DELIVERY MODE Tube Tube Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 24 Resistive or Inductive Load 25 D = 0.5 D = 0.3 D = 0.8 Average Forward Current (A) 20 Average Power Loss (W) V20100SG VI20100SG VF20100SG 20 D = 0.2 D = 1.0 D = 0.1 16 15 12 8 10 T 5 D = tp/T tp 20 24 4 0 0 25 50 75 100 125 150 175 0 0 4 8 12 16 Case Temperature (°C) Average Forward Current (A) Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics www.vishay.com 2 Document Number: 88966 Revision: 19-Oct-07 New Product V20100SG, VF20100SG & VI20100SG Vishay General Semiconductor 100 10 TA = 150 °C TA = 125 °C Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) Junction to Case 1 10 0.1 TA = 25 °C 1 0.01 www.DataSheet4U.com 0.1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 V(I)20100SG 0.001 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 3. Typical Instantaneous Forward Characteristics Figure 6. Typical Transient Thermal Impedance 100 10 Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) TA = 150 °C 10 TA = 125 °C 1 Junction to Case 0.1 0.01 TA = 25 °C 0.001 10 20 30 40 50 60 70 80 90 100 VF2...

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