Maker : Vishay
Part No. : V20120SG

  Datasheet PDF : V20120SG.pdf
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www.DataSheet.co.kr New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.54 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 V20120SG PIN 1 PIN 2 CASE 3 1 VF20120SG PIN 1 PIN 2 2 3 1 • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. PIN 3 PIN 3 TO-263AB K K TO-262AA A NC 1 VB20120SG NC A K HEATSINK 2 3 MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum VI20120SG PIN 1 PIN 2 K PIN 3 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 20 A 120 V 150 A 0.78 V 150 °C MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C Voltage rate of change (rated VR) Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range Document Number: 88994 Revision: 24-Jun-09 SYMBOL VRRM IF(AV) IFSM EAS IRRM dV/dt VAC TJ, TSTG V20120SG VF20120SG VB20120SG VI20120SG UNIT V A A mJ A V/µs V °C www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ 120 20 150 80 0.5 10 000 1500 - 40 to + 150 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.DataSheet.co.kr New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS IR = 1.0 mA IF = 5 A IF = 10 A IF = 20 A IF = 5 A IF = 10 A IF = 20 A VR = 90 V Reverse current (2) SYMBOL VBR TYP. 120 (minimum) 0.62 0.81 1.20 MAX. 1.33 0.88 250 25 UNIT TA = 25 °C TA = 25 °C Instantaneous forward voltage (1) VF TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C 0.54 0.65 0.78 10 7 IR 12 V µA mA µA mA VR = 120 V Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RθJC V20120SG 2.2 VF20120SG 4.2 VB20120SG 2.2 VI20120SG 2.2 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB ITO-220AB TO-263AB TO-263AB TO-262AA PREFERRED P/N V20120SG-E3/4W VF20120SG-E3/4W VB20120SG-E3/4W VB20120SG-E3/8W VI20120SG-E3/4W UNIT WEIGHT (g) 1.88 1.75 1.38 1.38 1.45 PACKAGE CODE 4W 4W 4W 8W 4W BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube DELIVERY MODE Tube Tube Tube Tape and reel Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 25 Resistive or Inductive Load 35 D = 0.5 30 V(B,I)20120SG 15 VF20120SG D = 0.3 D = 0.2 D = 1.0 20 15 T 10 5 0 0 25 50 75 100 125 150 175 0 4 8 12 16 20 24 D = 0.1 D = 0.8 Average Forward Current (A) Average Power Loss (W) 20 25 10 5 Mounted on Specific Heatsink 0 D = tp/T tp Case Temperature (°C) Average Forward Current (A) Figure 1. Forward Current Der...

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