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| datasheet.co.kr > datasheet > V20150C > Dual High-Voltage Trench MOS Barrier Schottky Rectifier |
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Dual High-Voltage Trench MOS Barrier Schottky RectifierMaker : Vishay
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Product Information |
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www.DataSheet.co.kr New Product V20150C, VF20150C, VB20150C & VI20150C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.59 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation 3 2 V20150C PIN 1 PIN 3 3 1 VF20150C PIN 1 PIN 3 PIN 2 2 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 1 PIN 2 CASE TO-263AB K K TO-262AA TYPICAL APPLICATIONS For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA PIN 2 K 2 1 1 VB20150C PIN 1 PIN 2 K HEATSINK PIN 1 PIN 3 2 3 VI20150C Case: TO-220AB, TO-262AA ITO-220AB, TO-263AB and Epoxy meets UL 94V-0 flammability rating PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max. 2 x 10 A 150 V 120 A 0.69 V 150 °C Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) per device per diode SYMBOL VRRM IF(AV) IFSM VAC TJ, TSTG V20150C VF20150C VB20150C 150 20 10 120 1500 - 55 to + 150 VI20150C UNIT V A A V °C Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range Document Number: 89046 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr New Product V20150C, VF20150C, VB20150C & VI20150C Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS IR = 1.0 mA IF = 5 A IF = 10 A IF = 5 A IF = 10 A VR = 100 V Reverse current per diode (2) VR = 150 V Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms TA = 25 °C TA = 25 °C VF TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL VBR TYP. 150 (minimum) 0.79 1.05 0.59 0.69 1.3 1.2 IR 3 MAX. 1.20 V 0.75 150 15 µA mA µA mA UNIT V Instantaneous forward voltage per diode (1) THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL RθJC V20150C 2.8 VF20150C 5.0 VB20150C 2.8 VI20150C 2.8 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB ITO-220AB TO-263AB TO-263AB TO-262AA PREFERRED P/N V20150C-E3/4W VF20150C-E3/4W VB20150C-E3/4W VB20150C-E3/8W VI20150C-E3/4W UNIT WEIGHT (g) 1.88 1.75 1.39 1.39 1.45 PACKAGE CODE 4W 4W 4W 8W 4W BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube DELIVERY MODE Tube Tube Tube Tape and reel Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 25 10 Resistive or Inductive Load V(B,I)20150C D = 0.5 D = 0.8 Average Forward Rectified Current (A) Average Power Loss (W) 20 8 D = 0.2 6 D = 0.1 4 D = 0.3 15 VF20150C D = 1.0 10 T 2 D = tp/T 0 tp 10 12 5 Mounted on Specific Heatsink 0 0 25 50 75 100 125 150 175 0 2 4 6 8 Case Temperature (°C) Average Forward Current (A) Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics Per Diode www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89046 Revi... |
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