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High-Voltage Trench MOS Barrier Schottky RectifierMaker : Vishay
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Product Information |
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www.DataSheet.co.kr New Product V20150S, VF20150S, VB20150S & VI20150S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.55 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation 2 V20150S PIN 1 3 1 VF20150S PIN 1 PIN 2 2 3 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS 1 PIN 2 CASE PIN 3 PIN 3 TO-263AB K K TO-262AA A NC 1 VB20150S NC A K HEATSINK PIN 1 2 3 For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection. MECHANICAL DATA Case: TO-220AB, TO-262AA ITO-220AB, TO-263AB and VI20150S PIN 2 K PIN 3 PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 20 A 150 V 160 A 0.75 V 150 °C Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (Fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Operating junction and storage temperature range SYMBOL VRRM IF(AV) IFSM VAC TJ, TSTG V20150S VF20150S VB20150S VI20150S UNIT V A A V °C 150 20 160 1500 - 55 to + 150 Document Number: 89059 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 Datasheet pdf - http://www.DataSheet4U.net/ www.DataSheet.co.kr New Product V20150S, VF20150S, VB20150S & VI20150S Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Breakdown voltage TEST CONDITIONS IR = 1.0 mA IF = 5 A IF = 10 A IF = 20 A IF = 5 A IF = 10 A IF = 20 A VR = 100 V Reverse current (2) VR = 150 V Notes: (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms TA = 25 °C TA = 25 °C VF TA = 125 °C TA = 25 °C TA = 125 °C TA = 25 °C TA = 125 °C SYMBOL VBR TYP. 150 (minimum) 0.69 0.84 1.15 0.55 0.64 0.75 2 2.5 IR 5 MAX. 1.43 V 0.82 250 25 µA mA µA mA UNIT V Instantaneous forward voltage (1) THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance SYMBOL RθJC V20150S 2.0 VF20150S 4.0 VB20150S 2.0 VI20150S 2.0 UNIT °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB ITO-220AB TO-263AB TO-263AB TO-262AA PREFERRED P/N V20150S-E3/4W VF20150S-E3/4W VB20150S-E3/4W VB20150S-E3/8W VI20150S-E3/4W UNIT WEIGHT (g) 1.88 1.75 1.39 1.39 1.45 PACKAGE CODE 4W 4W 4W 8W 4W BASE QUANTITY 50/tube 50/tube 50/tube 800/reel 50/tube DELIVERY MODE Tube Tube Tube Tape and reel Tube RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 25 20 Resistive or Inductive Load V(B,I)20150S D = 0.8 18 D = 0.5 D = 0.3 D = 0.2 Average Forward Rectified Current (A) Average Power Loss (W) 20 16 14 12 10 8 6 4 2 0 D = 0.1 15 VF20150S D = 1.0 10 T 5 Mounted on Specific Heatsink 0 0 25 50 75 100 125 150 175 D = tp/T 0 2 4 6 8 10 12 14 16 18 20 tp 22 24 Case Temperature (°C) Average Forward Current (A) Figure 1. Maximum Forward Current Derating Curve Figure 2. Forward Power Loss Characteristics www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 89059 Revision: 19-May-08 Datasheet pdf - h... |
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