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SILICON BRIDGE RECTIFIERSMaker : EIC discrete Semiconductors
Shortcut : W1-07311APA-G0 W10 W10 W10 W10 W10 W10 W10 W10G W10G W10G W10G W10G W10G W10G W10G W10L W10M W10M W10M W10M W10M W10M W10M W10M W10M W10M W10M W10MG W10NC60 W10NK60Z W10NK807 W10NK80Z W11NB80 W12NA60 W130 W130L W132 W133 W134M W134S W137 W13NB60 W144 W147 W147G W149 W14B W14NB50 W14NC50 W15 W150 W150NF55 W152 W155 W158 W15NA50 W15NB50 W160A W161 W162 W163 W164 W166 W167B W16NA40 W16NB60 W170 W170-01 W1724CBBAD W1724CBBAH W1724CDDAD W180 W181 W182 W182-5 W183 W183-5 W184 W184-5 W185 W185-5 W18NB40 W18NK80Z W191 W194 W1942S W195B W196 W196 W199 W19B160BB W19B160BT W19B320BB W19B320BT |
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Product Information |
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W005 - W10 PRV : 50 - 1000 Volts Io : 1.5 Ampere FEATURES : * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board SILICON BRIDGE RECTIFIERS WOB 0.39 (10.0) 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) + AC 1.00 (25.4) MIN. 1.10 (27.9) MIN. 0.034 (0.86) 0.028 (0.71) MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated leads solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 1.29 grams Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. AC + AC 0.22 (5.59) 0.18 (4.57) 0.22 (5.59) 0.18 (4.57) Dimension in inches and (millimeter) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.375" (9.5 mm) lead length Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Rating for fusing ( t < 8.3 ms. ) Ta = 25 °C Ta = 100 °C Maximum Forward Voltage per Diode at IF = 1.0 Amp. Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) Operating Junction Temperature Range Storage Temperature Range SYMBOL W005 VRRM VRMS VDC IF(AV) I FSM It VF IR IR(H) CJ RθJA TJ T STG 2 W01 100 70 100 W02 200 140 200 W04 400 280 400 1.5 50 10 1.0 10 1.0 14 36 W06 600 420 600 W08 800 560 800 W10 1000 700 1000 UNIT Volts Volts Volts Amps. Amps. A2S Volts µA mA pf °C/W °C °C 50 35 50 Typical Junction Capacitance per Diode (Note 1) - 50 to + 150 - 50 to + 150 Notes : 1 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts. 2 ) Thermal resistance from Junction to Ambient at 0.375" (9.5 mm) lead length P.C. Board mounting. UPDATE : JANUARY 24, 2000 RATING AND CHARACTERISTIC CURVES ( W005 - W10 ) FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 1.5 50 PC Board 0.375(9.5mm) FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT AVERAGE FORWARD OUTPUT CURRENT, AMPERES 1.2 PEAK FORWARD SURGE CURRENT, AMPERES 40 T J = 55 ° C 0.9 Copper Pads 0.22" x 0.22" (5.5 x5.5mm) 30 0.6 20 SINGLE HALF SINE WAVE (JEDEC METHOD) 0.3 60 Hz, Resistive or Inductive load. 0 0 25 50 75 100 125 150 175 10 0 1 2 4 6 10 20 40 60 100 CASE TEMPERATURE, ( ° C) NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL FORWARD CHARACTERISTICS REVERSE CURRENT, MICROAMPERES 20 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS FORWARD CURRENT, AMPERES 10 T J = 100 °C 1 1.0 0.1 TJ = 25 °C Pulse Width = 300 µ s 1 % Duty Cycle 0.1 T J = 25 °C 0.01 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) ... |
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