Maker : ST Microelectronics
Part No. : X00619

  Datasheet PDF : X00619.pdf
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www.DataSheet4U.com X00619 0.8 A sensitive gate SCR Features ■ ■ ■ IT(RMS) = 0.8 A VDRM / VRRM = 600 V IGT = 30 to 200 µA G A K Applications ■ ■ ■ ■ ■ ■ Limited gate current topologies Ground fault circuit interrupters Overvoltage crowbar protection in power supplies Protection in electronic ballasts Capacitive discharge ignitions Ignitors (lighting, oven...) Table 1. Device summary IT(RMS) VDRM / VRRM IGT 0.8 A 600 V 30 to 200 µA K G A TO-92 (X00619-MA) Description The X006 SCR can be used as on/off function in applications where topology does not offer high current for gate triggering. This device is optimized in forward voltage drop and inrush current capabilities for reduced power losses and high reliability in harsh environments. May 2009 Doc ID 15755 Rev 1 1/7 www.st.com 7 www.DataSheet4U.com Characteristics X00619 1 Table 2. Symbol IT(RMS) IT(AV) ITSM I²t di/dt IGM PG(AV) Tstg Tj Characteristics Absolute ratings (limiting values, TJ = 25 °C unless otherwise specified) Parameter On-state rms current (180 °Conduction angle) Average on-state current (180 °Conduction angle) Non repetitive surge peak on-state current I²t Value for fusing Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns Peak gate current Average gate power dissipation Storage junction temperature range Operating junction temperature range tp = 8.3 ms tp = 10 ms tp = 10 ms F = 60 Hz tp = 20 µs TL = 85 °C TL = 85 °C Tj = 25 °C Tj = 25 °C Tj = 125 °C Tj = 125 °C Tj = 125 °C Value 0.8 0.5 10 A 9 0.4 50 1 0.1 - 40 to + 150 - 40 to + 125 A2s A/µs A W °C Unit A A Table 3. Symbol IGT VGT VGD VRG IH IL dV/dt Electrical characteristics (TJ = 25 °C unless otherwise specified) Test conditions MIN. VD = 12 V, RL = 140 Ω MAX. 0.8 VD = VDRM, RL = 3.3 kΩ , RGK = 1 kΩ IRG = 10 µA IT = 50 mA, RGK = 1 kΩ IG = 1 mA, RGK = 1 kΩ VD = 67% VDRM, RGK = 1 kΩ Tj = 125 °C Tj = 125 °C MIN. MIN. MAX. MAX. MIN. 0.2 5 5 6 40 V V V mA mA V/µs Value 30 µA 200 Unit Table 4. Symbol VTM VTO Rd IDRM IRRM Static electrical characteristics (per diode) Test conditions ITM = 1 A, tp = 380 µs Threshold voltage Dynamic resistance VDRM = VRRM, RGK = 1 kΩ Tj = 125 °C Tj = 25 °C Tj = 125 °C MAX Tj = 25 °C Value 1.35 0.85 245 1 100 Unit V V mΩ µA µA 2/7 Doc ID 15755 Rev 1 www.DataSheet4U.com X00619 Table 5. Symbol Rth(j-a) Rth(j-l) Junction to ambient (DC) Junction to lead (DC) Characteristics Thermal resistances Parameter Value 150 °C/W 70 Unit Figure 1. Maximum average power dissipation vs. average on-state current Figure 2. Average and DC on-state current vs. case temperature P(W) 0.6 α = 180° IT(AV)(A) 1.0 0.9 D.C. 0.5 0.8 0.7 0.6 α = 180° 0.4 0.3 0.5 0.4 0.2 360° 0.3 0.2 0.1 IT(AV)(A) 0.0 0.0 0.1 0.2 0.3 0.4 α 0.1 0.0 Tl(°C) 0 25 50 75 100 125 0.5 0.6 Figure 3. Average and DC on-state current vs. case temperature Figure 4. Relative variation of thermal impedance junction to ambient vs. pulse duration IT(AV)(A) 1.0 0.9 D.C. SCU = 0.5 cm2 Zth(j-a)/Rth(j-a) 1.00 SCU = 0.5 cm2 0.8 0.7 0.6 α = 180° 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 100 125 0.10 Tamb(°C) 0.01 1.E-03 1.E-02 1.E-01 tp(s) 1.E+00 1.E+01 1.E+02 1.E+03 Doc ID 15755 Rev 1 3/7 www.DataSheet4U.com Characteristics X00619 Figure 5. Relative variation of gate trigger, holding and latching current vs. junction temperature Figure 6. Relative variation of holding current vs. gate-cathode resistance (typical values) IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C] 1.6 1.4 1.2 1.0 IH & IL IH[RGK] / IH[RGK=1kΩ] 3.5 Typical values 3.0 2.5 2.0 1.5 0.8 0.6 0.4 0.2 IGT 1.0 0.5 Tj(°C) 0.0 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 0.0 1.E-02 1.E-01 RGK(kΩ) 1.E+00 1.E+01 1.E+02 Figure 7. Relative variatiohn of dV/dt immunity vs. gate-cathode resistance (typical values) VD = 0.67 x VDRM Figure 8. Relative variation of dV/dt immunity vs. gate-cathode capacitance (typical values) VD = 0.67 x VDR...

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